ip semiconductor co., ltd. ipt12q06 - xxb high current density due to double mesa technology; sipos and glass passivation. ipt12q06 - xx series are suitable for general purpose ac switching. they can be used as an on/off function in application such as static relays, heating regulation, induction motor stating circuits or for phase control operation light dimmers, motor speed controllers. main features absolute maximum ratings 1 to - 220b symbol value unit i t(rms) 12 a v drm / v rrm 600 v v tm 1.55 v 4f, cheong won b/d, 269 hyoje - dong, jongno - gu, seoul, 110 - 480 korea tel : +82 - 70 - 7574 - 2839, fax : +82 - 2 - 6280 - 6382, sales@ipsemiconductor.com parameter symbol value unit storage junction temperature range operating junction temperature range tstg tj - 40 to +150 - 40 to +125 drm v rrm 600 600 v non repetitive peak off - state voltage tj = 25 dsm v rsm 700 700 v rms on C state current tc = 79 t(rms) 12 a non repetitive surge peak on C state current f = 60hz t = 16.7ms (full cycle, tj = 25 tsm 126 120 a i 2t value for fusing t p = 10ms i 2t 78 a 2s critical rate of rise of on - state current i g = 2xi gt , t r 100ns, f = 120hz, tj = 125 di / dt 50 a/us peak gate current t p = 20us, tj = 125 gm 4 a average gate power dissipation tj = 125 g(av) 1 w
ipt12q06 - xxb 2 static characteristics symbol test conditions value(max) unit v tm i tm = 17a, t p = 380us tj = 25 drm v d = v drm tj = 25 rrm v r = v rrm tj = 125 thermal resistances symbol parameter value unit r th (j C c) junction to case (ac) 1.4 electrical characteristics (tj = 25 ipt12q06 - xxb unit ce be i gt v d = 12v r l = 30 ? i C ii C iii iv max 25 50 50 100 ma v gt all max 1.3 v v gd v d =v drm, r l =3.3k ?, tj = 125 l i g = 1.2 i gt i C iii C iv max 40 50 ma ii 80 100 i h i t = 100 m a max 25 50 ma dv/dt v d = 67% v drm gate open tj = 125
4f, cheong won b/d, 269 hyoje - dong, jongno - gu, seoul, 110 - 480 korea tel : +82 - 70 - 7574 - 2839, fax : +82 - 2 - 6280 - 6382, sales@ipsemiconductor.com package mechanical data to - 220b 3 millimeters min typ max a 4.4 4.6 b 0.61 0.88 c 0.46 0.70 c2 1.23 1.32 c3 2.4 2.72 d 8.6 9.7 e 9.8 10.4 f 6.2 6.6 g 4.8 5.4 h 28 29.8 l1 3.75 l2 1.14 1.7 l3 2.65 2.95 v 40o ipt12q06 - xxb
4 ipt12q06 - xxb ipt12q06 - xxb 4f, cheong won b/d, 269 hyoje - dong, jongno - gu, seoul, 110 - 480 korea tel : +82 - 70 - 7574 - 2839, fax : +82 - 2 - 6280 - 6382, sales@ipsemiconductor.com
|
